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- دیتاشیت FQD13N06LTM
FQD13N06LTM دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | FQD13N06LTM |
|---|---|
| حجم فایل | 80.793 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 10 |
دانلود دیتاشیت FQD13N06LTM |
دانلود دیتاشیت |
|---|
سایر مستندات
FQD13N06L, FQU13N06L 10 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQD13N06LTM
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 2.5W;28W
- Total Gate Charge (Qg@Vgs): 6.4nC@5V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 350pF@25V
- Continuous Drain Current (Id): 11A
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 115mΩ@10V,5.5A
- Package: TO-252
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 5V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: FQD1
- detail: N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak